標(biāo)準(zhǔn)號(hào)：IEC 60749-34 Edition 2.0-2010
中文標(biāo)準(zhǔn)名稱：半導(dǎo)體器件.機(jī)械和氣候試驗(yàn)方法.第34部分:電力循環(huán)
英文標(biāo)準(zhǔn)名稱：Semiconductor devices.Mechanical and climatic test methods. Part 34: Power cycling
標(biāo)準(zhǔn)類型：L40
發(fā)布日期：2010/10/1 12:00:00
實(shí)施日期：2010/10/1 12:00:00
中國(guó)標(biāo)準(zhǔn)分類號(hào)：L40
國(guó)際標(biāo)準(zhǔn)分類號(hào)：31.080.01
引用標(biāo)準(zhǔn)：IEC 60747-1-2006;IEC 60747-2-2000;IEC 60747-6-2000;IEC 60749-3;IEC 60749-23
適用范圍：This part of IEC 60749 describes a test method used to determine the resistance of asemiconductor device to thermal and mechanical stresses due to cycling the powerdissipation of the internal semiconductor die and internal connectors. This happens when lowvoltageoperating biases for forward conduction (load currents) are periodically applied andremoved, causing rapid changes of temperature. The power cycling test is intended tosimulate typical applications in power electronics and is complementary to high temperatureoperating life (see IEC 60749-23). Exposure to this test may not induce the same failuremechanisms as exposure to air-to-air temperature cycling, or to rapid change of temperatureusing the two-fluid-baths method. This test causes wear-out and is considered destructive.NOTE It is not the intention of this specification to provide prediction models for lifetime evaluation.