標(biāo)準(zhǔn)號：IEC 60748-21-1997
中文標(biāo)準(zhǔn)名稱：半導(dǎo)體器件 集成電路 第21部分:實(shí)行鑒定批準(zhǔn)程序的膜集成電路和混合膜集成電路分規(guī)范
英文標(biāo)準(zhǔn)名稱：Semiconductor devices - Integrated circuits - Part 21: Sectional specification for film integrated circuits and hybrid film integrated circuits on the basis of the qualification approval procedure
標(biāo)準(zhǔn)類型：L56
發(fā)布日期：1999/12/31 12:00:00
實(shí)施日期：1999/12/31 12:00:00
中國標(biāo)準(zhǔn)分類號：L56
國際標(biāo)準(zhǔn)分類號：31.200
適用范圍：This sectional specification applies to film integrated circuits and hybrid film integrated circuits, manufactured as catalogue circuits or as custom-built circuits whose quality is assessed on the basis of qualification approval. The object of this specification is to present preferred values for ratings and characteristics, to select from the generic specification the appropriate tests and measuring methods and to give general performance requirements to be used in detail specifications for film integrated circuits and hybrid film integrated circuits derived from this specification. The concept of preferred values is directly applicable to catalogue circuits but does not necessarily apply to custom-built circuits. Test severities and requirements prescribed in detail specifications referring to this sectional specification are of equal or higher performance level, because lower performance levels are not permitted. Associated with this specification are one or more blank detail specifications, each referenced by an IEC number. A blank detail specification which has been completed as specified in 2.3 of this specification forms a detail specification. Such detail specifications are used for the granting of qualification approval of film integrated circuits and hybrid film integrated circuits and quality conformance inspection in accordance with the IECQ system. NOTE - For test procedures two alternatives are available: method A or method B. However, it is not permitted to change the methods between tests of method A, respectively B. In general, method A Is more suitable for passive-component based film integrated circuits, whereas method B is more applicable to semiconductor integrated circuit technology based film integrated circuits.