標(biāo)準(zhǔn)號：BS EN 60749-36-2003
中文標(biāo)準(zhǔn)名稱：半導(dǎo)體器件.機(jī)械和氣候試驗(yàn)方法.穩(wěn)態(tài)加速
英文標(biāo)準(zhǔn)名稱：Semiconductor devices - Mechanical and climatic test methods - Acceleration, steady state
標(biāo)準(zhǔn)類型：L40
發(fā)布日期：2003/6/19 12:00:00
實(shí)施日期：2003/6/19 12:00:00
中國標(biāo)準(zhǔn)分類號：L40
國際標(biāo)準(zhǔn)分類號：31.080.01
適用范圍：This part of IEC 60749 provides a test for determining the effects of constant acceleration on cavity-type semiconductor devices. It is an accelerated test designed to indicate types of structural and mechanical weaknesses not necessarily detected in shock and vibration test. It may be used as a high stress (destructive) test to determine the mechanical limits of the package, internal metallisation and lead system, die or substrate attachment, and other elements of the microelectronic device. When proper stress levels have been established this test method may also be employed as a non-destructive in-line 100 % screen to detect and eliminate devices with lower than normal mechanical strengths in any of the structural elements. In general, this acceleration steady-state test method is in conformity with IEC 60068-2-7 but, due to specific requirements of semiconductors, the clauses of this standard apply.